FET

Die Kategorie oben

N - Kanal

Art der Komponente:(1949)

FET Tranzistor (1948) N_FET 1x single (1)

Konfiguration:(1923)

2*High side (7) 2*Low side (9) 8*High side (1) Bridge 3f (15) Full Bridge (29) Half Bridge (12) Half Bridge (T-BD) (18) Half Bridge (T-BD+Series D) (2) Half Bridge (T-BD+Series D+Par.D) (13) High side (49) Low side (23) Low side 1*(Boost Chopper) (23) Low+High side (1) Single 1*(T-BD) (1619) Single 1*(T-BD+Parallel D) (4) Single 1*(T-BD+Prot.Input) (5) Single 1*(T-BD+Separate D) (5) Single 1*(T-BD+Series D) (2) Single 1*(T-BD+SeriesD) (2) Single 2*(T-BD) (78) single-E2*(T-BD) (3) switching reg. (3)

Gehäusetyp:(1786)

Modul (202) SMD (701) THT (883)

U_dc (U_RRM, U_CEO, U_max) [V] (1695)?

U_dc - Definitionen für Komponenten

U_dc= U_RRM - Diode

U_dc= U_DRM, U_RRM - Thyristor

U_dc= U_CEO - Transistoren

U_dc= U_max -

-600 (1) -500 (5) -400 (8) -350 (4) -220 (3) -200 (23) -160 (1) -150 (7) -100 (42) -90 (1) -80 (2) -60 (27) -55 (23) -50 (3) -45 (1) -40 (15) -30 (43) -20 (34) -16.5 (2) -14 (1) -12 (10) -8 (1) 3 (1) 6.0 (2) 9 (1) 12 (4) 20 (50) 20.0 (1) 20/-20 (9) 24 (1) 25 (4) 25/-25 (1) 30 (106) 30/-20 (1) 30/-30 (8) 34.0 (1) 35.0 (3) 36.0 (12) 37.0 (3) 40 (39) 40.0 (10) 42.0 (6) 45.0 (3) 47.0 (4) 50 (10) 50.0 (8) 52.0 (2) 55 (83) 55/-55 (1) 60 (78) 60.0 (5) 60/-60 (1) 62.0 (1) 65.0 (4) 70 (2) 75 (34) 80 (11) 90 (3) 100 (150) 100.0 (1) 135 (1) 150 (38) 200 (111) 200.0 (1) 200/-200 (8) 240 (3) 250 (21) 250.0 (1) 300 (28) 350 (7) 400 (42) 450 (4) 500 (155) 500/-500 (1) 550 (2) 560 (2) 600 (116) 650 (18) 650.0 (3) 700 (5) 800 (74) 900 (8) 1000 (73) 1200 (50) 1500 (2)

I_FAV / I_C (Tc/Ta=25°C) [A] (61)

-4.7 (1) -4.3 (2) -2.2 (1) 0.7 (1) 1 (1) 1.2 (3) 1.4 (2) 1.5 (1) 1.7 (1) 2 (1) 2.3 (1) 2.7 (1) 2.8 (1) 3.5 (1) 4 (2) 4.5 (2) 5 (3) 5.1 (1) 5.5 (2) 5.8 (1) 6 (2) 6.5 (2) 7 (2) 7.4 (1) 8 (1) 8.3 (1) 8.5 (2) 10 (2) 12.6 (1) 14 (3) 18 (5) 25 (1) 26 (1) 30 (1) 35 (2) 45 (1) 50 (1) 55 (1) 58 (1) 64 (1)

Kategorie Spezifikationen: Konstruktion: Anzahl der Schaltungen (im Gehäuse) Gehäuse [inch] : Maße (L*W*H) [mm]: Art des Materials: Material: Gehäuse Material Base T_min (minimale Arbeitstemperatur) T_max (maximale Arbeitstemperatur) U_RRM / U_CEO I_DS (Tc/Ta=25°C) I_dc_max (Tc/Ta=25÷160°C) U_isol (@25°C/1min/50Hz) U_F (maximum forward voltage) U_{CE (sat)} (@25°C) I_DC-OUT (T_C/T_A=25°C) I_R (Rückstrom) du/dt (critical rate of rise of on-state voltage) di/dt (critical rate of rise of on-state current) I²t (T_C/T_A=25°C) P_max mit Kühler (T_C=25°C) P_max ohne Kühler ( T_A=25°C) R_th-c (Wärmewiderstand) Rthjc1 IGBT Rthjc2 Dioda, Tyristor R_th-a (Wärmewiderstand) Esw (125°C) Ugs(th)min@25°C[V] Ugs(th)typ@25°C[V] Ugs(th)max@25°C[V] Ugs (max) Input Logic Level (U_GS level) R_{DS (on)} 3V (U_GS=2.5÷2.7V) R_{DS (on)} 5V (U_GS=4.5÷5.0V) R_{DS (on)} 10V (U_GS=10÷15V) t_rr Wiederherstellungszeit (If=Inom.,@25°C) t_r (Turn-on / rise time) t_f/t_q (Turn-off / fall time) f_max max.frequency (max./typ.) f max h_FE current gain (max./typ.) Q_g (Total Gate Charge) C_in (Input Capacitance) RM - Anschlussraster RM1 - Abstand der Reihen Anzahl der Stifte RoHS REACH D - Ø (Außendurchmesser) L - Länge L1 - Länge W - Breite H - Höhe T - Dicke Abmessungen der Anschlüsse Lv - Anschlusslänge RoHS1

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APT6015LVRG Trans MOSFET N-CH 600V 38A 3-Pin(3+Tab) TO-264 Tube
ID: 188855 Hersteller-Nr.: APT6015LVRG

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